Electrical and photoelectric properties of polycrystalline textured CdTe

被引：7

作者：

Klevkov, YV ^{[1
]}

Kolosov, SA ^{[1
]}

Medvedev, SA ^{[1
]}

Plotnikov, AF ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1410652

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependences of the resistivity and photoconductivity spectra of polycrystalline coarse-grained stoichiometric CdTe purified in the process of repeated recrystallization at temperatures two times lower than melting point were studied; CdTe ingots were synthesized from starting components subjected profound purification. It is shown that the main characteristics of polycrystals (resistivity, and the lifetime and mobility of carriers) are determined by composite complexes formed as a result of interaction between extended and point defects. The values of the product of mobility multiplied by lifetime are determined. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：1139 / 1143

页数：5

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