1.8 kV, 3.8 A bipolar junction transistors in 4H-SiC

被引：10

作者：

Ryu, SH ^{[1
]}

Agarwal, AK ^{[1
]}

Palmour, JW ^{[1
]}

Levinshtein, ME ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High voltage npn bipolar junction transistors in 4H-SiC are presented in this paper. The BJTs were able to block 1800 V in common emitter mode and showed a peak current gain of 20 and an on-resistance of 10.8 m Omega .cm(2) at room temperature. Temperature-stable current gain was observed for these devices. This is due to the higher percent ionization of the deep level acceptor atoms in the base region at elevated temperatures, which offsets the effects of increased minority carrier lifetime at high temperatures. These transistors show a positive temperature coefficient in the on-resistance characteristics, which will enable easy paralleling of the devices.

引用

页码：37 / 40

页数：4

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