High resolution characterization of grain boundaries in Cu2ZnSnSe4 solar cells synthesized by nanoparticle selenization

被引：4

作者：

Xu, Mingjie ^{[1
,2
,3
]}

Liu, Bing ^{[4
]}

Graham, George ^{[1
,2
,3
]}

Pan, Xiaoqing ^{[1
,2
]}

机构：

[1] Univ Calif Irvine, Dept Chem Engn & Mat Sci, 916 Engn Tower, Irvine, CA 92697 USA

[2] Univ Calif Irvine, Dept Phys & Astron, 916 Engn Tower, Irvine, CA 92697 USA

[3] Univ Michigan, Dept Mat Sci & Engn, 2300 Hayward St, Ann Arbor, MI 48109 USA

[4] MRA America Inc, 1044 Woodridge Ave, Ann Arbor, MI 48105 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 157卷

基金：

美国国家科学基金会;

关键词：

CZTSe; Transmission electron microscopy; Grain boundary; Raman mapping; Photo-current mapping; Conductive atomic force microscopy; DEVICE; PERFORMANCE; FABRICATION;

D O I：

10.1016/j.solmat.2016.05.020

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report a novel fabrication and multiple high resolution characterizations of Cu2ZnSnSe4 solar cells. The fabrication is based on nanoparticle precursor production by liquid-phase pulsed laser ablation (LPPLA), electrophoretic deposition of precursor thin film under ambient condition, and selenization. Columnar grain boundaries are studied using spatially mapped Raman spectroscopy and scanning probe microscopy for their compositional and electrical properties. We observe high electrical conductivity near columnar grain boundaries, and propose poor Cu composition as the cause of the enhancement of the collection of minority carriers. We also study horizontal grain boundaries using cross-sectional scanning transmission electron microscopy (STEM). Combining with the device I-V and quantum efficiency, we suggest that the horizontal grain boundaries act as barriers to the transportation of minority carriers. CZTSe cells with efficiencies of 4.77% and 2.20% are compared. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：171 / 177

页数：7

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