MOVPE growth and surface reconstructions of GaAsN(001) surfaces

被引：1
|
作者：
Ehlert, R
Poser, F
Esser, N
Vogt, P
Richter, W
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Inst Analyt Sci, Dept Berlin, D-12489 Berlin, Germany
[3] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 13期
关键词：
D O I：
10.1002/pssb.200541174
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this study we present comparative in-situ Reflectance Anisotropy Spectroscopy (RAS) studies of GaAs1-xNx under MOVPE conditions and in UHV for samples with a nitrogen content of up to 5%. The samples were grown by MOVPE and after growth capped with an amorphous As-layer, transferred to UHV and decapped by annealing. Three different surface reconstructions (c(4 X 4), (2 X 4), (4 X 2)) were obtained after decapping and prolonged annealing at different temperatures. These reconstructions, though similar to those found on the GaAs(001) surface show clear nitrogen-related features in the RAS line shape.
引用
收藏
页码：2575 / 2580
页数：6
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