Three dimensional solid-state supercapacitors from aligned single-walled carbon nanotube array templates

被引:85
作者
Pint, Cary L. [1 ,3 ]
Nicholas, Nolan W. [1 ,3 ]
Xu, Sheng [4 ]
Sun, Zhengzong [2 ,3 ]
Tour, James M. [2 ,3 ]
Schmidt, Howard K. [3 ]
Gordon, Roy G. [4 ]
Hauge, Robert H. [2 ,3 ]
机构
[1] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[2] Rice Univ, Dept Chem, Houston, TX 77005 USA
[3] Rice Univ, Richard E Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
[4] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
基金
美国国家科学基金会;
关键词
ATOMIC LAYER DEPOSITION; FILMS; ELECTRODES; PERFORMANCE; CAPACITORS; INTERFACE; STORAGE;
D O I
10.1016/j.carbon.2011.07.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate the fabrication of solid-state dielectric energy storage materials from self-assembled, aligned single-walled carbon nanotube arrays (VA-SWNTs). The arrays are transferred as intact structures to a conductive substrate and the nanotubes are conformally coated with a thin metal-oxide dielectric and a conductive counter-electrode layer using atomic layer deposition. Experimental results yield values in agreement with those obtained through capacitive modeling using Al(2)O(3) dielectric coatings (C > 20 mF/cm(3)), and the solid-state dielectric architecture enables the operation of these devices at substantially higher frequencies than conventional electrolyte-based capacitor designs. Furthermore, modeling of supercapacitor architectures utilizing other dielectric layers suggests the ability to achieve energy densities above 10 W h/kg while still exhibiting power densities comparable to conventional solid-state capacitor devices. This device design efficiently converts the high surface area available in the conductive VA-SWNT electrode to space for energy storage while boasting a robust solid-state material framework that is versatile for use in a range of conditions not practical with current energy storage technology. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:4890 / 4897
页数:8
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