Lateral thinking about power devices (LDMOS)

被引：37

作者：

Efland, TR ^{[1
]}

Tsai, CY ^{[1
]}

Pendharkar, S ^{[1
]}

机构：

[1] Texas Instruments Inc, Power Device Dev, Mixed Signal Productizat, Dallas, TX 75265 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

BiCMOS Power technology LDMOS are reviewed with respect to category and structure definition and briefly as to how the structures relate to figure of merit performance. Stepped gate oxide devices are introduced making use of popular dual gate technologies and exhibit improved R-sp vs BV performance of up to 30% at low V-gs without sacrifice of BV. Production use of thick copper plated bussing up to 25 mu m thick with R-sh=0.8m Omega/sq is revealed for power, enabling up to 40% efficiency improvement on LDMOS power transistors.

引用

页码：679 / 682

页数：4

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