Electrical properties of semi-insulating GaAs irradiated with neutrons

被引:0
作者
Bohácek, P [1 ]
Morvic, M [1 ]
Betko, J [1 ]
Dubecky, F [1 ]
Huran, J [1 ]
机构
[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
来源
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS | 2002年
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conductivity, Hall mobility and magnetoresistance in semi-insulating (SI) GaAs samples irradiated with neutrons of various fluences ranging from 1 x 10(17) to 3 x 10(19) m(-2) were measured and analysed in the temperatrure range 300-420 K. The magnetoresistance increases while the conductivity and the apparent Hall mobility decrease with increasing neutron fluence. The electron (n) to hole (p) concentration ratio resulting from the analysis of the room temperature parameters using a mixed conductivity model decreases with increasing neutron fluence as far as the ratio n/p exhibits values less than one at the highest fluences used. No remarkable differences were observed between activation energies for deep donors in samples with n/p>1 and that for deep acceptors in samples with n/p<1 deduced from the temperature dependences of the free charge carriers concentration. The role of thermal neutron shielding at irradiation, using a Cd-plate, is discussed.
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页码:31 / 34
页数:4
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