Self Assembled Monolayer Applications for Nano-scale CMOS

被引:0
作者
Naik, Tejas [1 ]
Rao, V. Ramgopal [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Bombay, Maharashtra, India
来源
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年
关键词
self-assembled monolayer; nano-scale; CMOS; copper diffusion; work function; TECHNOLOGIES;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required. Various issues of reliability, variability and power issues are a challenge with the miniaturization of devices. Integration of bottom up processes becomes essential for meeting the scaling targets with respect to the material thickness and variability requirements. In the present work, we demonstrate the use of self-assembled monolayers for addressing the reliability and functionality issues in nano-scale CMOS.
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相关论文
共 6 条
[1]  
[Anonymous], P OPT FIB COMM OFC M
[2]  
KHADERBAD MA, 2008, P 8 IEEE INT C NAN A, P167
[3]   Porphyrin Self-Assembled Monolayer as a Copper Diffusion Barrier for Advanced CMOS Technologies [J].
Khaderbad, Mrunal A. ;
Pandharipande, Rohit ;
Singh, Vibhas ;
Madhu, Sheri ;
Ravikanth, M. ;
Rao, V. Ramgopal .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (07) :1963-1969
[4]   Variable Interface Dipoles of Metallated Porphyrin Self-Assembled Monolayers for Metal-Gate Work Function Tuning in Advanced CMOS Technologies [J].
Khaderbad, Mrunal A. ;
Roy, Urmimala ;
Yedukondalu, M. ;
Rajesh, M. ;
Ravikanth, M. ;
Rao, V. Ramgopal .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2010, 9 (03) :335-337
[5]   A Vapor Phase Self-Assembly of Porphyrin Monolayer as a Copper Diffusion Barrier for Back-End-of-Line CMOS Technologies [J].
Naik, Tejas R. ;
Singh, Vibhas ;
Ravikanth, M. ;
Rao, V. Ramgopal .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (05) :2009-2015
[6]   Self-assembled subnanolayers as interfacial adhesion enhancers and diffusion barriers for integrated circuits [J].
Ramanath, G ;
Cui, G ;
Ganesan, PG ;
Guo, X ;
Ellis, AV ;
Stukowski, M ;
Vijayamohanan, K ;
Doppelt, P ;
Lane, M .
APPLIED PHYSICS LETTERS, 2003, 83 (02) :383-385