Solution-based fabrication of ZnO/ZnSe heterostructure nanowire arrays for solar energy conversion

被引:34
作者
Cho, Seungho [1 ]
Jang, Ji-Wook [1 ]
Lim, Sang-Hoon [1 ]
Kang, Hyun Joon [1 ]
Rhee, Shi-Woo [1 ]
Lee, Jae Sung [1 ]
Lee, Kun-Hong [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 790784, Gyungbuk, South Korea
基金
新加坡国家研究基金会;
关键词
HYDROGEN GENERATION; ZNO NANOSTRUCTURES; PHOTOCATALYTIC DEGRADATION; NANOTREE ARRAYS; QUANTUM DOTS; GROWTH; TIO2; PHOTOSENSITIZATION; NANOPARTICLES; NANORODS;
D O I
10.1039/c1jm14014k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a method for synthesizing ZnO/ZnSe heterostructure nanowire arrays for use in photoelectrochemical (PEC) water splitting. The surfaces of ZnO nanowires immobilized on a conducting glass substrate were modified to form ZnO/ZnSe heterostructure nanowire arrays through a reaction with an aqueous sodium selenite and hydrazine solution. ZnO/ZnSe heterostructure nanowires with different morphologies were synthesized by varying solution concentrations and reaction times. The ZnO nanowire/ZnSe nanoparticle heterostructures (ZS1) were synthesized by a dissolution-recrystallization mechanism. At longer reaction times and higher solution concentrations, the nanostructure arrays transformed into ZnO nanowire/ZnSe nanosphere heterostructure arrays (ZS2) via Ostwald ripening. ZnO/ZnSe heterostructure arrays (ZS1 and ZS2) yielded higher photocurrents than the pristine ZnO nanowire arrays in a PEC water splitting test under AM 1.5G simulated solar light. The ZnO/ZnSe heterostructure array photoanodes exhibited absorption in the visible spectrum (<550 nm in wavelength) with a high incident-photon-to-current-conversion efficiency (IPCE) of up to 47% (ZS1) or 57% (ZS2) at 0.0 V vs. Ag/AgCl. The photoanode yielded a relatively high photocurrent density of 1.67 mA cm(-2) (ZS1) or 2.35 mA cm(-2) (ZS2) at 0.3 V compared to the ZnO nanowire arrays (0.125 mA cm(-2)). Structural differences between ZS1 and ZS2 yielded different PEC performances. A comparison to ZS2 revealed that ZS1 exhibited a higher photocurrent density under a low applied potential (from -0.78 V to -0.07 V) and a lower photocurrent density under a high applied potential (above -0.07 V).
引用
收藏
页码:17816 / 17822
页数:7
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