Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP

被引:2
作者
Pettersson, H
Landin, L
Fu, Y
Kleverman, M
Borgström, M
Seifert, W
Samuelson, L
机构
[1] Halmstad Univ, Elect & Phys Lab, SE-30118 Halmstad, Sweden
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[3] Lund Univ, Div Solid State Phys, SE-22100 Lund, Sweden
关键词
QDIP; photocurrent spectroscopy; exiton photoionization;
D O I
10.1016/j.mejo.2005.02.011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we report on an overview of recent results from Fourier transform photocurrent (FTPC) measurements in the infrared spectral region on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In interband PC, clear signals related to the dots are observed. Comparing the PC- and PL spectra, we observe that the fundamental transition is absent in the PC spectra, which we interpret in terms of Pauliblocking due to a filled electron ground state of the dots. Our results furthermore suggest that an Auger process is involved in forming the interband PC signal. In intersubband PC, peaks related to transitions from the dots' ground- and first excited states to the conduction band of the matrix are observed. Using a novel approach of combining FTPC with illumination from an additional external nonmodulated light source, we have measured the spectral distribution of photoionization of excitons in quantum dots and found an exciton binding energy in good agreement with theoretical calculations. (c) 2005 Published by Elsevier Ltd.
引用
收藏
页码:227 / 230
页数:4
相关论文
共 14 条
  • [1] Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy
    Carlsson, N
    Junno, T
    Montelius, L
    Pistol, ME
    Samuelson, L
    Seifert, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 191 (03) : 347 - 356
  • [2] Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
    Chu, L
    Zrenner, A
    Böhm, G
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3599 - 3601
  • [3] Quantum-dot infrared photodetector with lateral carrier transport
    Chu, L
    Zrenner, A
    Bichler, M
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2249 - 2251
  • [4] Boundary conditions of continuum states in characterizing photocurrent of GaAs/AlGaAs quantum well infrared photodetector
    Fu, Y
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2001, 30 (02) : 69 - 74
  • [5] Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed Bragg reflectors
    Huffaker, DL
    Deppe, DG
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (14) : 1781 - 1783
  • [6] Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
    Landin, L
    Pettersson, H
    Kleverman, M
    Borgström, M
    Zhang, X
    Seifert, W
    Samuelson, L
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 8007 - 8010
  • [7] Vertical cavity lasers based on vertically coupled quantum dots
    Lott, JA
    Ledentsov, NN
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kop'ev, PS
    Alferov, ZI
    Bimberg, D
    [J]. ELECTRONICS LETTERS, 1997, 33 (13) : 1150 - 1151
  • [8] Photoexcitation of excitons in self-assembled quantum dots
    Pettersson, H
    Landin, L
    Liu, R
    Seifert, W
    Pistol, ME
    Samuelson, L
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 5046 - 5048
  • [9] Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
    Pettersson, H
    Landin, L
    Kleverman, M
    Seifert, W
    Samuelson, L
    Fu, Y
    Willander, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 1829 - 1831
  • [10] Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system
    Pettersson, H
    Warburton, RJ
    Kotthaus, JP
    Carlsson, N
    Seifert, W
    Pistol, ME
    Samuelson, L
    [J]. PHYSICAL REVIEW B, 1999, 60 (16) : R11289 - R11292