Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves

被引：5
作者：
Takahashi, Tsuyoshi [1 ,2 ]
Kawaguchi, Kenichi [1 ,2 ]
Sato, Masaru [1 ,2 ]
Suhara, Michihiko [3 ]
Okamoto, Naoya [1 ,2 ]
机构：
[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[3] Tokyo Metropolitan Univ, Hachioji, Tokyo 1920397, Japan
来源：
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019) | 2019年
关键词：
nanowire; backward; diode; sensitivity; harvesting; tunneling; MILLIMETER-WAVE DETECTORS; EFFICIENCY; PERFORMANCE;
D O I：
10.1109/essderc.2019.8901802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Type-II p-GaAs0.6Sb0.4/n-InAs nanowire backward diodes (BWDs) were developed for ambient RF energy harvesting. Vapor-liquid-solid (VLS) growth method was used to grow nanowire segments on a GaAs(111)B substrate. For stable growth, n-GaAs nanowire segments were grown before growing p-GaAs0.6Sb0.4/n-InAs segments. The I-V characteristic of the diodes displayed large nonlinearity under zero bias condition, which is typical of backward diodes. The nanowire BWDs indicated linear detected voltages when a microwave input signal from 0.1 to 10 mu W was applied at 2.4 GHz. The diodes can operate at 2.4 GHz under zero bias. Impedance-matched voltage sensitivity of 370 kV/W was obtained for the nanowire BWDs. The obtained sensitivity value was higher than those of well-designed Schottky barrier diodes (SBDs).
引用
收藏
页码：214 / 217
页数：4
相关论文
共 22 条
  • [1] Bahl I., 1988, MICROWAVE SOLID STAT, P549
  • [2] Selective-area vapour-liquid-solid growth of InP nanowires
    Dalacu, Dan
    Kam, Alicia
    Austing, D. Guy
    Wu, Xiaohua
    Lapointe, Jean
    Aers, Geof C.
    Poole, Philip J.
    [J]. NANOTECHNOLOGY, 2009, 20 (39)
  • [3] High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection
    Fay, P
    Schulman, JN
    Thomas, S
    Chow, DH
    Boegeman, YK
    Holabird, KS
    [J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) : 585 - 587
  • [4] Towards Low-Power High-Efficiency RF and Microwave Energy Harvesting
    Hemour, Simon
    Zhao, Yangping
    Lorenz, Carlos Henrique Petzl
    Houssameddine, Dimitri
    Gui, Yongsheng
    Hu, Can-Ming
    Wu, Ke
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (04) : 965 - 976
  • [5] Position-Controlled VLS Growth of Nanowires on Mask-Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures
    Kawaguchi, Kenichi
    Takahashi, Tsuyoshi
    Okamoto, Naoya
    Sato, Masaru
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (08):
  • [6] Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor-liquid-solid method
    Kawaguchi, Kenichi
    Takahashi, Tsuyoshi
    Okamoto, Naoya
    Sato, Masaru
    [J]. APPLIED PHYSICS EXPRESS, 2018, 11 (02)
  • [7] Position-controlled InP nanowires with 10-100 μm pitches using Au-deposited SiO2/InP patterned substrates
    Kawaguchi, Kenichi
    Sudo, Hisao
    Matsuda, Manabu
    Ekawa, Mitsuru
    Yamamoto, Tsuyoshi
    Arakawa, Yasuhiko
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (06)
  • [8] Kawai K, 2018, GEOTECH SP, P1
  • [9] Chemical and structural characterization of GaSb(100) surfaces treated by HCI-based solutions and annealed in vacuum
    Liu, ZY
    Hawkins, B
    Kuech, TF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01): : 71 - 77
  • [10] Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes
    Lorenz, Carlos Henrique Petzl
    Hemour, Simon
    Li, Wenjun
    Xie, Yi
    Gauthier, Jules
    Fay, Patrick
    Wu, Ke
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (12) : 4544 - 4555
123