Integrated Fab Process for Metal Oxide EUV Photoresist

被引：76

作者：

Grenville, Andrew ^{[1
]}

Anderson, Jeremy T. ^{[1
]}

Clark, Benjamin L. ^{[1
]}

De Schepper, Peter ^{[1
]}

Edson, Joseph ^{[1
]}

Greer, Michael ^{[1
]}

Jiang, Kai ^{[1
]}

Kocsis, Michael ^{[1
]}

Meyers, Stephen T. ^{[1
]}

Stowers, Jason K. ^{[1
]}

Telecky, Alan J. ^{[1
]}

De Simone, Danilo ^{[2
]}

Vandenberghe, Geert ^{[2
]}

机构：

[1] Inpria Corp, Corvallis, OR 97330 USA

[2] IMEC, B-3001 Louvain, Belgium

来源：

ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXII | 2015年 / 9425卷

关键词：

EUV photoresist; metal oxide photoresist; patternable hardmask; inorganic negative tone resist;

D O I：

10.1117/12.2086006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Inpria is developing directly patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography. Targeted formulations have achieved 13nm half-pitch at 35 mJ/cm(2) on an ASML's NXE:3300B scanner. Inpria's second-generation materials have an absorbance of 20/mu m, thereby enabling an equivalent photon shot noise compared to conventional resists at a dose lower by a factor of 4X. These photoresists have similar to 40:1 etch selectivity into a typical carbon underlayer, so ultrathin 20nm films are possible, mitigating pattern collapse. In addition to lithographic performance, we review progress in parallel advances required to enable the transition from lab to fab for such a metal oxide photoresist. This includes considerations and data related to: solvent compatibility, metals cross-contamination, coat uniformity, stability, outgassing, and rework.

引用

页数：8

共 4 条

[1]

Ekinci Y, 2013, P SPIE, V8679

[2] Stochastic exposure kinetics of extreme ultraviolet photoresists: Trapping model [J].