Epitaxial growth of Cu2O and ZnO/Cu2O thin films on MgO by plasma-assisted molecular beam epitaxy

被引：34

作者：

Darvish, Davis S. ^{[1
]}

Atwater, Harry A. ^{[1
]}

机构：

[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 319卷 / 01期

关键词：

Molecular beam epitaxy; Oxides; Semiconducting materials; Heterojunction semiconductor device solar cell;

D O I：

10.1016/j.jcrysgro.2011.01.071

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the epitaxial growth of Cu2O (0 0 1) and m-plane (1 0 T 0) ZnO/Cu2O thin films on both bulk MgO (0 0 1) and biaxially textured thin films of MgO (0 0 1) via plasma-assisted molecular beam epitaxy. Cube on cube epitaxial growth of Cu2O thin films on both bulk MgO (0 0 1) and biaxially textured thin films of MgO (0 0 1) was observed and confirmed via X-ray diffraction and reflection high energy electron diffraction measurements. In addition, epitaxial m-plane ZnO growth via plasma-assisted MBE was conducted on both MgO substrates and Cu2O/MgO substrates. The ability to grow oriented, high-quality n-ZnO/p-Cu2O heterostructures enables improved thin film morphology and may have important implications for optoelectronic and photovoltaic devices. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：39 / 43

页数：5

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