Excimer pulsed laser deposition and annealing of YSZ nanometric films on Si substrates

被引:12
作者
Caricato, AP
Barucca, G
Di Cristoforo, A
Leggieri, G [1 ]
Luches, A
Majni, G
Martino, M
Mengucci, P
机构
[1] Univ Lecce, Dipartimento Fis, I-73100 Lecce, Italy
[2] INFM, I-73100 Lecce, Italy
[3] Univ Politecn Marche, Dipartimento Fis & Ingn Mat & Territorio, I-60131 Ancona, Italy
[4] INFM, I-60131 Ancona, Italy
关键词
yttria-stabilised zirconia; annealing treatments; pulsed laser deposition; electron microscopy; grazing incidence X-ray; diffraction X-ray reflectivity;
D O I
10.1016/j.apsusc.2005.03.048
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report experimental results obtained for electrical and structural characteristics of yttria-stabilised zirconia (YSZ) thin films deposited by pulsed laser deposition (PLD) on Si substrates at room temperature. Some samples were submitted to thermal treatments in different ambient atmospheres (vacuum, N-2 and O-2) at a moderate temperature. The effects of thermal treatments on the film electrical properties were studied by C-Vand I-V measurements. Structural characteristics were obtained by X-ray diffraction (XRD), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) analyses. The as-deposited film was amorphous with an in-depth non-uniform density. The annealed films became polycrystalline with a more uniform density. The sample annealed in O-2 was uniform over all the thickness. Electrical characterisation showed large hysteresis, high leakage current and positive charges trapped in the oxide in the as-deposited film. Post-deposition annealing, especially in O-2 atmosphere, improved considerably the electrical properties of the films. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:270 / 275
页数:6
相关论文
共 18 条
[1]  
*BRUK AXS GMBH, 1999, REFS VERS 1 2K
[2]   Reliability and integration of ultra-thin gate dielectrics for advanced CMOS [J].
Buchanan, DA ;
Lo, SH .
MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) :13-20
[3]   Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].
Copel, M ;
Gribelyuk, M ;
Gusev, E .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :436-438
[4]   Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition [J].
Dai, JY ;
Ong, HC ;
Chang, RPH .
JOURNAL OF MATERIALS RESEARCH, 1999, 14 (04) :1329-1336
[5]   Structural and optical properties of yttria-stabilized-zirconia films grown by MOCVD [J].
Garcia, G ;
Figueras, A ;
Merino, RI ;
Orera, VM ;
Llibre, J .
THIN SOLID FILMS, 2000, 370 (1-2) :173-178
[6]   Correlation between microscopic and macroscopic properties of yttria stabilized zirconia 1. Single crystals [J].
Hartmanova, M ;
Schneider, J ;
Navratil, V ;
Kundracik, F ;
Schulz, H ;
Lomonova, EE .
SOLID STATE IONICS, 2000, 136 (136-137) :107-113
[7]   Thermodynamic stability of binary oxides in contact with silicon [J].
Hubbard, KJ ;
Schlom, DG .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776
[8]   Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation [J].
Lei, CH ;
Van Tendeloo, G ;
Siegert, M ;
Schubert, J ;
Buchal, C .
JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) :558-564
[9]   Effects of annealing on the microstructure of yttria-stabilised zirconia thin films deposited by laser ablation [J].
Mengucci, P ;
Barucca, G ;
Caricato, AP ;
Di Cristoforo, A ;
Leggieri, G ;
Luches, A ;
Majnia, G .
THIN SOLID FILMS, 2005, 478 (1-2) :125-131
[10]   The electronic structure at the atomic scale of ultrathin gate oxides [J].
Muller, DA ;
Sorsch, T ;
Moccio, S ;
Baumann, FH ;
Evans-Lutterodt, K ;
Timp, G .
NATURE, 1999, 399 (6738) :758-761