Effects of the annealing temperature on the properties of sulfur-graded Cu2ZnSn(S,Se)4 thin films grown by a modified two-step process

被引：1

作者：

Ko, Byoung-Soo ^{[1
,2
]}

Kim, Dae-Hwan ^{[3
]}

Hwang, Dae-Kue ^{[3
]}

Lee, Seoung-Jun ^{[4
]}

Kim, Jong Su ^{[2
]}

机构：

[1] Kyungpook Natl Univ, Dept Radiat Oncol, Chilgok Hosp, Daegu, South Korea

[2] Yeungnam Univ, Dept Phys, Gyongsan 38541, South Korea

[3] Daegu Gyeongbuk Inst Sci & Technol, Daegu 711873, South Korea

[4] Kyungpook Natl Univ Hosp, Dept Radiat Oncol, Daegu, South Korea

来源：

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY | 2020年 / 82卷

基金：

新加坡国家研究基金会;

关键词：

CZTSSe; Co-evaporation; H2S gas; Rapid thermal process; Sulfur-graded; Zn(S; Se); SOLAR-CELLS; SOLID-SOLUTIONS; CU2ZNSNSE4; SELENIZATION; DEPOSITION;

D O I：

10.1016/j.jiec.2019.11.004

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, we investigated the electrical and structural properties of sulfur-graded Cu2ZnSn(S,Se)(4) (CZTSSe) thin films grown using a modified two-step process according to the annealing temperature. The sulfur content of the CZTSSe thin film was increased with annealing temperature and a Zn(S, Se) secondary phase was observed at temperatures higher than 500 degrees C. The Raman spectrum of the CZTSSe thin film shifted continuously toward the high frequency direction with increasing S content and the Cu2SnSe3 (CTSe) secondary phase was present below 440 degrees C. From the results of dimpling Raman spectroscopy and scanning transmission electron microscopy (STEM) line scanning, we confirmed that the S content increased gradually from the Mo back contact to the surface of the CZTSSe thin film. Finally, a sulfur-graded CZTSSe thin film with a photovoltaic efficiency of 7.03% was fabricated by optimizing the annealing temperature. (C) 2019 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

引用

页码：406 / 412

页数：7

共 31 条

[1] Cu2Zn1-xCdxSn(Se1-ySy)4 solid solutions as absorber materials for solar cells [J].