Investigation of ruthenium electrodes for (Ba,Sr)TiO3 thin films

被引：30
作者：
Joo, JH [1 ]
Seon, JM
Jeon, YC
Oh, KY
Roh, JS
Kim, JJ
Choi, JT
机构：
[1] LG Semicon, Adv Technol Lab, Proc Grp, Cheongju 361480, South Korea
[2] LG Semicon, ULSI Lab, Adv Analyt Grp, Cheongju 361480, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 6A期
关键词：
ruthenium; electrode; DRAM; high dielectric materials; surface morphology; residual stress;
D O I：
10.1143/JJAP.37.3396
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ru/(Ba, Sr)TiO3(BST)/Ru capacitors were fabricated on TiN/Ti/Poly-Si/SiO2/Si substrate by sputtering technique. The effects of the bottom ruthenium electrode, deposited at various temperatures, on the characteristics of Ru/BST/Ru capacitor were intensively studied. Sputtered ruthenium films were grown in a columnar structure with a.rain size similar to 30 nm. With an increasing deposition temperature of ruthenium films, the (002) preferred orientation and grain size of ruthenium films gradually increased while the residual compressive stress in the ruthenium films was reduced. The surface of ruthenium films was oxidized to form RuOx on its surface during the deposition of BST films, which dramatically changed the surface morphology of ruthenium films and affected the characteristics of Ru/BST/Ru capacitor. in this work, the electrical properties of Ru/BST/Ru capacitors are explained with an emphasis on the surface morphology and residual stress of ruthenium films.
引用
收藏
页码：3396 / 3401
页数：6
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