Zn1-xCdxO/ZnO heterostructures for visible light emitting devices

被引：16
作者：
Nakamura, A
Ishihara, J
Shigemori, S
Yamamoto, K
Aoki, T
Gotoh, H
Temmyo, J
机构：
[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan
[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
[3] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期
关键词：
ZnO; ZnCdO; heterostructure; remote plasma-enhanced MOCVD; photoluminescence; light-emitting device;
D O I：
10.1143/JJAP.44.L4
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Wurtzite Zn1-xCdxO/ZnO heterostructures were successfully grown by remote plasma enhanced metalorganic chemical vapor deposition (RPE-MOCVD) and were investigated by photoluminescence (PL) spectroscopy. The flatness of Zn1-xCdxO films was investigated by an atomic force microscope (AFM), indicating the typical RNIS value of 0.5 nm. The optical properties of the Zn0.96Cd0.04O film were characterized by micro-PL at 4 K, exhibiting micro-structural and positional uniformities in the films. In the double heterostructure consisting of ZnO/Zn0.92Cd0.08O/ZnO, temperature and excitation intensity dependencies of PL spectra were examined. The PL emission is characterized as localized and free exciton emission. A dependence with a slope near unity is obtained from the excitation dependence of the PL intensity. Blue-green emission (2.78 eV) was demonstrated from the double-heterostructure at room temperature.
引用
收藏
页码：L4 / L6
页数：3
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