Light-Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO3 Film for a Flexible Multistate High-Storage Memory Device

被引：36
作者：
Sun, Bai [1 ,2 ]
Tang, Mei [1 ,2 ]
Gao, Ju [3 ]
Li, Chang Ming [1 ,2 ,3 ]
机构：
[1] Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
[2] Chongqing Key Lab Adv Mat & Technol Clean Elect P, Chongqing 400715, Peoples R China
[3] Suzhou Univ Sci & Technol, Inst Mat Sci & Devices, Suzhou 215011, Peoples R China
来源：
CHEMELECTROCHEM | 2016年 / 3卷 / 06期
关键词：
ferroelectric memory; flexible and wearable; light-controlled; multistate memory; resistive switching; THIN-FILMS; ELECTRONICS; NANOWIRE; POLARIZATION; TRANSISTORS; FABRICATION; INTERFACE; MECHANISM; GRAPHENE; ARRAY;
D O I：
10.1002/celc.201600002
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A flexible memory device with an ITO/BiFeO3/Ti/Polyimide structure is prepared for light-controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high-storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light-controlled non-volatile multistate memory device with a high capacity and low cost.
引用
收藏
页码：896 / 901
页数：6
相关论文
共 49 条
[1]   Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory [J].
Ambrogio, Stefano ;
Balatti, Simone ;
Choi, Seol ;
Ielmini, Daniele .
ADVANCED MATERIALS, 2014, 26 (23) :3885-3892
[2]  
Andersson P, 2002, ADV MATER, V14, P1460, DOI 10.1002/1521-4095(20021016)14:20<1460::AID-ADMA1460>3.0.CO
[3]  
2-S
[4]   Fiber Supercapacitors Made of Nanowire-Fiber Hybrid Structures for Wearable/Flexible Energy Storage [J].
Bae, Joonho ;
Song, Min Kyu ;
Park, Young Jun ;
Kim, Jong Min ;
Liu, Meilin ;
Wang, Zhong Lin .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2011, 50 (07) :1683-1687
[5]   Organic materials for printed electronics [J].
Berggren, M. ;
Nilsson, D. ;
Robinson, N. D. .
NATURE MATERIALS, 2007, 6 (01) :3-5
[6]   'Memristive' switches enable 'stateful' logic operations via material implication [J].
Borghetti, Julien ;
Snider, Gregory S. ;
Kuekes, Philip J. ;
Yang, J. Joshua ;
Stewart, Duncan R. ;
Williams, R. Stanley .
NATURE, 2010, 464 (7290) :873-876
[7]   Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors [J].
Chen, Bin ;
Li, Mi ;
Liu, Yiwei ;
Zuo, Zhenghu ;
Zhuge, Fei ;
Zhan, Qing-Feng ;
Li, Run-Wei .
NANOTECHNOLOGY, 2011, 22 (19)
[8]   Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3 [J].
Choi, T. ;
Lee, S. ;
Choi, Y. J. ;
Kiryukhin, V. ;
Cheong, S. -W. .
SCIENCE, 2009, 324 (5923) :63-66
[9]   Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells [J].
Chu, Dewei ;
Lin, Xi ;
Younis, Adnan ;
Li, Chang Ming ;
Dang, Feng ;
Li, Sean .
JOURNAL OF SOLID STATE CHEMISTRY, 2014, 214 :38-41
[10]   Electric-field control of local ferromagnetism using a magnetoelectric multiferroic [J].
Chu, Ying-Hao ;
Martin, Lane W. ;
Holcomb, Mikel B. ;
Gajek, Martin ;
Han, Shu-Jen ;
He, Qing ;
Balke, Nina ;
Yang, Chan-Ho ;
Lee, Donkoun ;
Hu, Wei ;
Zhan, Qian ;
Yang, Pei-Ling ;
Fraile-Rodriguez, Arantxa ;
Scholl, Andreas ;
Wang, Shan X. ;
Ramesh, R. .
NATURE MATERIALS, 2008, 7 (06) :478-482
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