Wideband Two-Stage 50W GaN-HEMT Power Amplifier

被引：0

作者：

Chi Thanh Nghe ^{[1
,3
]}

Maassen, Daniel ^{[1
]}

Zimmer, Gernot ^{[3
]}

Boeck, Georg ^{[1
,2
]}

机构：

[1] Berlin Inst Technol, Microwave Engn Lab, Berlin, Germany

[2] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Berlin, Germany

[3] Frankfurt Univ Appl Sci, Frankfurt, Germany

来源：

2015 GERMAN MICROWAVE CONFERENCE | 2015年

关键词：

GaN-HEMT; high efficiency; high power; interstage matching network; two-stage power amplifier; wideband;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a high power, high efficiency and wideband two-stage GaN-HEMT power amplifier (PA) is presented and illustrated together with the design, implementation, and measured results. The scope of the design was to build broadband input-, interstage-, and output-matching networks based on source-/load-pull simulations and a systematic approach. The large-signal measurements indicate that the achieved output power is higher than 50W, the power gain locates in the range of 27-28 dB, and the Power-Added-Efficiency (PAE) reaches 45-55% over a frequency range of 2-2.8 GHz. Moreover, linearized modulated measurements were also performed by applying a 5MHz Wideband Code Division Multiple Access (WCDMA) signal with 9 dB peak-to-average power ratio (PAPR). The resulted adjacent channel leakage ratio (ACLR) at 2.2 GHz was achieved at -38 dBc, with an average output power of 5W and an average PAE of 18 %.

引用

页码：17 / 20

页数：4

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