Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth

被引：0
|
作者：
Mawst, L. J. [1 ]
Park, J. H. [1 ]
Kirch, J. [1 ]
Liu, C. -C. [2 ]
Rathi, M. K. [2 ]
Nealey, P. F. [2 ]
Kuech, T. F. [2 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Engn Dr, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
关键词：
D O I：
10.1109/LEOS.2009.5343359
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diblock copolymer nanopatterning and selective growth is utilized to produce InGaAsP/In0.53Ga0.47As/InGaAsP Quantum Dots on InP substrates, demonstrating RTPL near 1.6 mu m. Electroluminescence near 1.25 mu m is achieved from ridge-waveguide devices.
引用
收藏
页码：739 / +
页数：2
相关论文
共 50 条
  • [31] Site-controlled growth of InP/InGaP quantum dots
    Baumann, V.
    Stumpf, F.
    Kremling, S.
    Steinl, T.
    Forchel, A.
    Schneider, C.
    Hoefling, S.
    Kamp, M.
    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 261 - 264
  • [32] Fabrication of 1.3 μm strained InGaAsP InGaAsP MQW SSC-LD by selective area MOCVD growth
    Kim, TJ
    Ji, JK
    Keh, YC
    Kim, HS
    Lee, SD
    Choo, AG
    Kim, TI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S315 - S317
  • [33] Laser stimulated selective area growth of quantum dots
    Wanker, A
    Schremer, AT
    Shealy, JR
    APPLIED PHYSICS LETTERS, 1998, 72 (25) : 3332 - 3334
  • [34] Impact of InGaAs carrier collection quantum well on the performance of InAs QD active region lasers fabricated by diblock copolymer lithography and selective area epitaxy
    Kim, Honghyuk
    Wei, Wei
    Kuech, Thomas F.
    Gopalan, Padma
    Mawst, Luke J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (02)
  • [35] Non-planar nano-selective area growth of InGaAs/InP
    Kuznetsova, N.
    Colman, P.
    Semenova, E.
    Kadkhodazadeh, S.
    Kryzhanovskaya, N. V.
    Ek, S.
    Xue, W.
    Schubert, M.
    Zhukov, A. E.
    Yvind, K.
    QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING XI, 2014, 8996
  • [36] Surface morphology of InP/InGaAs in selective area growth by chemical beam epitaxy
    Verschuren, CA
    Leys, MR
    Oei, YS
    Vreeburg, CGM
    Vonk, H
    Rongen, RTH
    Wolter, JH
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 650 - 654
  • [37] Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning
    Park, Joo Hyung
    Liu, Chi-Chun
    Rathi, Manish K.
    Mawst, Luke J.
    Nealey, Paul F.
    Kuech, Thomas F.
    JOURNAL OF NANOPHOTONICS, 2009, 3
  • [38] Nanofabrication of Quantum Dots on InP by In-Situ Etching and Selective Growth
    Huang, Y.
    Kim, T.
    Garrod, T.
    Mawst, L. J.
    Xiong, S.
    Nealey, P. F.
    Schulte, K.
    Kuech, T. F.
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [39] Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP
    Zhang, ZH
    Cheng, KY
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3183 - 3185
  • [40] Growth area control of InAs quantum dots for photonic crystal-based optical devices by selective MOCVD
    Tatebayashi, J
    Ishida, S
    Someya, T
    Arakawa, Y
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, 2001, 4283 : 420 - 427
12345