Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth

被引：0
|
作者：
Mawst, L. J. [1 ]
Park, J. H. [1 ]
Kirch, J. [1 ]
Liu, C. -C. [2 ]
Rathi, M. K. [2 ]
Nealey, P. F. [2 ]
Kuech, T. F. [2 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Engn Dr, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
关键词：
D O I：
10.1109/LEOS.2009.5343359
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diblock copolymer nanopatterning and selective growth is utilized to produce InGaAsP/In0.53Ga0.47As/InGaAsP Quantum Dots on InP substrates, demonstrating RTPL near 1.6 mu m. Electroluminescence near 1.25 mu m is achieved from ridge-waveguide devices.
引用
收藏
页码：739 / +
页数：2
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