Imaging and characterizing nanoscale fluctuations in the distribution of dopant atoms by scanning tunneling microscopy

被引：0
|
作者：
Ebert, P [1 ]
机构：
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
来源：
DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII | 2004年 / 230卷
关键词：
clustering of dopant atoms; dopant-induced dots; dopant mapping; interface roughness; scanning tunneling microscopy;
D O I：
10.4028/www.scientific.net/DDF.230-232.111
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reviews the recent progress made in directly imaging and characterizing nanoscale fluctuations in the distribution of dopant atoms in semiconductors by cross-sectional scanning tunneling microscopy and spectroscopy. In particular the connection between the local fluctuations in the dopant distribution and the electronic properties is emphasized.
引用
收藏
页码：111 / 124
页数：14
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