Suppression Switching Ringing of SiC-MOSFET Inverters with Combined Design of DC Bus Snubber and Gate Drive

被引：0
|
作者：
Yu, Lingqiang [1 ]
Wu, Yuying [1 ]
Ibrahim, Abubakar Uba [1 ]
Xu, Dehong [1 ]
Igarashi, Seiki [2 ]
Fujihira, Tatsuhiko [2 ]
机构：
[1] Zhejiang Univ, Coll Electircal Engn, Hangzhou, Peoples R China
[2] Fuji Elect Co Ltd, Elect Devices Business Grp, Matsumoto, Nagano, Japan
来源：
2021 IEEE 12TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG) | 2021年
关键词：
SiC-MOSFET; switching ringing; DC bus snubber; gate drive; damping; CIRCUIT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The SiC MOSFET device has superior characteristics such as high switch speed, lower switching loss etc. However, fast switching of SiC MOSFET generally brings severe switching ringing in the power circuit. In this paper, suppression switching ringing of SiC-MOSFET inverters with combined design of DC bus snubber and gate drive is presented. Root locus method is introduced to design the snubber parameters. The effect and limitation of gate drive design are discussed. Finally, the suppression effect of the combined design is investigated through experiment on SiC half-bridge and 6-in-1 SiC module testing boards.
引用
收藏
页数：7
相关论文
共 50 条
  • [31] Smart current source gate driver for fast switching and cross-talk suppression of SiC MOSFET
    Liu, Chunhui
    Lei, Qin
    THIRTY-FOURTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2019), 2019, : 2734 - 2739
  • [32] Optimum gate driver design to reach SiC-MOSFET's full potential - speeding up to 200 kV/μs
    Kreutzer, Otto
    Eckardt, Bernd
    Maerz, Martin
    WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 41 - 46
  • [33] Gate driver, snubber and circuit design considerations for fast-switching series-connected SiC MOSFETs
    Ubostad, Tobias Nieckula
    Peftitsis, Dimosthenis
    IET POWER ELECTRONICS, 2024, 17 (14) : 1867 - 1881
  • [34] Digitally Controlled Active Gate Driver for SiC MOSFET based Induction Motor Drive switching at 100 kHz
    Sukhatme, Yash
    Titus, Jose
    Nayak, Parthasarathy
    Hatua, Kamalesh
    2017 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE (ITEC-INDIA), 2017,
  • [35] An Improved SiC MOSFET Gate Driver Design for Crosstalk Suppression in a Phase-Leg Configuration
    Li H.
    Huang Z.
    Liao X.
    Zhong Y.
    Wang K.
    Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2019, 34 (02): : 275 - 285
  • [36] Design of 1.2 kV SiC Trench MOSFET for suppression on Electric Field Crowding at Gate Oxide
    Park Y.
    Kim C.
    Yoon H.
    Kang G.
    Kim G.
    Seok O.
    Transactions of the Korean Institute of Electrical Engineers, 2022, 71 (11): : 1646 - 1650
  • [37] A Compact Inductively Coupled SiC MOSFET Snubber for Quasi-Zero-Voltage Turn-On, Switching Oscillation, and Voltage Spike Suppression
    Liu, Yanchao
    Yang, Xin
    Wang, Xiaodi
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (03) : 3135 - 3145
  • [38] Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters with Variable Gate Resistance
    He, Jinkui
    Sangwongwanich, Ariya
    Yang, Yongheng
    Iannuzzo, Francesco
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 1850 - 1855
  • [39] Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance
    He, Jinkui
    Sangwongwanich, Ariya
    Yang, Yongheng
    Zhang, Kaichen
    Iannuzzo, Francesco
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2022, 58 (05) : 6485 - 6495
  • [40] The Active Gate Drive Based on Negative Feedback Mechanism for Fast Switching and Crosstalk Suppression of SiC Devices
    Shao, Tiancong
    Zheng, Trillion Q.
    Li, Hong
    Liu, Jianqiang
    Li, Zhijun
    Huang, Bo
    Qiu, Zhidong
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (06) : 6739 - 6754
12345