Suppression Switching Ringing of SiC-MOSFET Inverters with Combined Design of DC Bus Snubber and Gate Drive

被引：0
|
作者：
Yu, Lingqiang [1 ]
Wu, Yuying [1 ]
Ibrahim, Abubakar Uba [1 ]
Xu, Dehong [1 ]
Igarashi, Seiki [2 ]
Fujihira, Tatsuhiko [2 ]
机构：
[1] Zhejiang Univ, Coll Electircal Engn, Hangzhou, Peoples R China
[2] Fuji Elect Co Ltd, Elect Devices Business Grp, Matsumoto, Nagano, Japan
来源：
2021 IEEE 12TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG) | 2021年
关键词：
SiC-MOSFET; switching ringing; DC bus snubber; gate drive; damping; CIRCUIT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The SiC MOSFET device has superior characteristics such as high switch speed, lower switching loss etc. However, fast switching of SiC MOSFET generally brings severe switching ringing in the power circuit. In this paper, suppression switching ringing of SiC-MOSFET inverters with combined design of DC bus snubber and gate drive is presented. Root locus method is introduced to design the snubber parameters. The effect and limitation of gate drive design are discussed. Finally, the suppression effect of the combined design is investigated through experiment on SiC half-bridge and 6-in-1 SiC module testing boards.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] Gate Drive Design for a Hybrid Si IGBT/SiC MOSFET Module
    Li, Lei
    Ning, Puqi
    Wen, Xuhui
    Bian, Yuanjun
    Zhang, Dong
    2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018, : 34 - +
  • [22] Design of Drive Parameters Considering Crosstalk Suppression for SiC MOSFET Applications
    Liu, Shengsheng
    Lin, Hua
    Wang, Tao
    Liu, Chunhui
    2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2019, : 3281 - 3286
  • [23] Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver
    Suzuki, Hiroshi
    Funaki, Tsuyoshi
    IEICE TRANSACTIONS ON ELECTRONICS, 2022, E105C (12) : 750 - 760
  • [24] Design Analysis of SiC-MOSFET Based Bidirectional SSPC for Aircraft High Voltage DC Distribution Network
    Khera, Fatma A.
    Bozhko, Serhiy
    Wheeler, Pat
    IEEE ACCESS, 2023, 11 : 113900 - 113912
  • [25] Research on Switching Characteristics Based on Optimization Design of SiC MOSFET Drive Circuit
    Wenjie Li
    Tianhu Wang
    Jungang Wang
    Tailiang Yu
    Instrumentation, 2024, 11 (02) : 64 - 71
  • [26] DSP-Based SiC-MOSFET SAPF With 100-kHz Sampling and Switching Frequency for Wideband Harmonic Suppression
    Zhang, Yuxiao
    Dai, Ke
    Xu, Hongwei
    Liu, Tianyi
    Lin, Haitao
    Dai, Ziwei
    Kang, Yong
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2021, 9 (01) : 689 - 701
  • [27] Design and Analysis of a SiC-MOSFET Based Three-Phase Motor Drive for an Off-World Application
    Neville, Jonathan
    Pfeiffer, Stephen
    Kozak, Joseph P.
    2024 IEEE AEROSPACE CONFERENCE, 2024,
  • [28] Design Considerations of DSP-based SiC-MOSFET SAPF with 100kHz Sampling and Switching Frequency
    Zhang, Yuxiao
    Dai, Ke
    Xu, Hongwei
    Lin, Haitao
    Zhang, Debin
    Lei, Qin
    2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2019, : 4781 - 4788
  • [29] A New Multi-stage SiC MOSFET Gate Drive Circuit for Improving Device Switching Characteristics
    Zhu, Feifan
    Cao, Wenping
    Yan, Zhishang
    Tan, Kun
    Hu, Cungang
    Sun, Lu
    PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON NEW ENERGY AND ELECTRICAL TECHNOLOGY, 2023, 1017 : 278 - 287
  • [30] An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications
    Yamamoto, Masayoshi
    Shirai, Shinya
    Thilak, Senanayake
    Imaoka, Jun
    Ishido, Ryosuke
    Okawauchi, Yuta
    Nakahara, Ken
    IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, 2022, E105A (05) : 834 - 843
12345