Suppression Switching Ringing of SiC-MOSFET Inverters with Combined Design of DC Bus Snubber and Gate Drive

被引：0
|
作者：
Yu, Lingqiang [1 ]
Wu, Yuying [1 ]
Ibrahim, Abubakar Uba [1 ]
Xu, Dehong [1 ]
Igarashi, Seiki [2 ]
Fujihira, Tatsuhiko [2 ]
机构：
[1] Zhejiang Univ, Coll Electircal Engn, Hangzhou, Peoples R China
[2] Fuji Elect Co Ltd, Elect Devices Business Grp, Matsumoto, Nagano, Japan
来源：
2021 IEEE 12TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG) | 2021年
关键词：
SiC-MOSFET; switching ringing; DC bus snubber; gate drive; damping; CIRCUIT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The SiC MOSFET device has superior characteristics such as high switch speed, lower switching loss etc. However, fast switching of SiC MOSFET generally brings severe switching ringing in the power circuit. In this paper, suppression switching ringing of SiC-MOSFET inverters with combined design of DC bus snubber and gate drive is presented. Root locus method is introduced to design the snubber parameters. The effect and limitation of gate drive design are discussed. Finally, the suppression effect of the combined design is investigated through experiment on SiC half-bridge and 6-in-1 SiC module testing boards.
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页数：7
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