Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

被引：18

作者：

Chan, KT ^{[1
]}

Chin, A ^{[1
]}

McAlister, SP ^{[1
]}

Chang, CY ^{[1
]}

Tseng, C ^{[1
]}

Liang, V ^{[1
]}

Chen, JK ^{[1
]}

Chien, SC ^{[1
]}

Duh, DS ^{[1
]}

Lin, WJ ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very low power loss less than or equal to 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of similar to 4 MeV for easier process integration into current VLSI technology.

引用

页码：963 / 966

页数：4

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