Optical approaches for controlling epitaxial growth

被引:16
作者
Aspnes, DE [1 ]
Dietz, N
机构
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
epitaxial growth; optical spectroscopy; OMCVD;
D O I
10.1016/S0169-4332(98)00085-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Optical spectroscopy of surface and near-surface regions has advanced to the stage where detailed measurements can be made and analyzed in real time. Here, we discuss reported and potential applications of optical probes for sample-driven closed-loop feedback control of semiconductor epitaxy. Parameters that have been controlled include temperature, thickness in both deposition and etching, and composition, including continuously graded compositions. Although considerable progress has been made, much remains to be done before these techniques become viable production tools. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:367 / 376
页数:10
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