Polymer resist materials for excimer ablation lithography

被引:15
作者
Suzuki, K [1 ]
Matsuda, M [1 ]
Hayashi, N [1 ]
机构
[1] Hitachi, Electron Tube & Devices Div, Chiba 297, Japan
关键词
polymer; resist; excimer ablation lithography; polyurethane;
D O I
10.1016/S0169-4332(98)00108-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Excimer ablation lithography (EAL) is a new lithography suitable to TFT-LCD. Among the constituent technologies, the polymer materials for the resist is most crucial, as high ablation rates are required at low fluence. To elucidate the ablation mechanism at low fluence we specified some characteristic features through observations of about 200 polymers. The low fluence features are explained by the contributions from the primary and secondary structures, and ablation dynamic process. From the results, it is derived that polyurethane is most promising material for EAL, and the design of the secondary structure is essential to improve the ablation rate. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:905 / 910
页数:6
相关论文
共 50 条
  • [21] Characterization of modifications of polymer surfaces after excimer laser treatments below the ablation threshold
    Laurens, P
    Bouali, MO
    Meducin, F
    Sadras, B
    APPLIED SURFACE SCIENCE, 2000, 154 : 211 - 216
  • [22] Pressure and resist thickness dependency of resist time evolutions profiles in nanoimprint lithography
    Hirai, Yoshihiko
    Onishi, Yuki
    Tanabe, Toshiaki
    Shibata, Mayuko
    Iwasaki, Takuya
    Iriye, Yasuroh
    MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 842 - 845
  • [23] Surface roughness of molecular resist for EUV lithography
    Toriumi, Minoru
    Kaneyama, Koji
    Kobayashi, Shinji
    Itani, Toshiro
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
  • [24] Resist material options for extreme ultraviolet lithography
    Kozawa, Takahiro
    ADVANCED OPTICAL TECHNOLOGIES, 2015, 4 (04) : 311 - 317
  • [25] Nanocomposite resist systems for next generation lithography
    Merhari, L
    Gonsalves, KE
    Hu, Y
    He, W
    Huang, WS
    Angelopoulos, M
    Bruenger, WH
    Dzionk, C
    Torkler, M
    MICROELECTRONIC ENGINEERING, 2002, 63 (04) : 391 - 403
  • [26] Development of Photoresists for ArF Excimer Laser Lithography
    Nozaki, Koji
    JOURNAL OF SYNTHETIC ORGANIC CHEMISTRY JAPAN, 2018, 76 (09) : 956 - 965
  • [27] RECENT PROGRESS IN KRF EXCIMER LASER LITHOGRAPHY
    NAKASE, M
    IEICE TRANSACTIONS ON ELECTRONICS, 1993, E76C (01) : 26 - 31
  • [28] QUARTER MICRON KRF EXCIMER LASER LITHOGRAPHY
    SASAGO, M
    ENDO, M
    TANI, Y
    KOBAYASHI, S
    KOIZUMI, T
    MATSUO, T
    YAMASHITA, K
    NOMURA, N
    IEICE TRANSACTIONS ON ELECTRONICS, 1993, E76C (04) : 582 - 587
  • [29] Study of dry etching resistance of methacrylate polymers for ArF excimer laser lithography
    Ohfuji, T
    Endo, M
    Takahashi, M
    Naito, T
    Tatsumi, T
    Kuhara, K
    Sasago, M
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 595 - 600
  • [30] Calixarene electron beam resist for nano-lithography
    Fujita, J
    Ohnishi, Y
    Manako, S
    Ochiai, Y
    Nomura, E
    Sakamoto, T
    Matsui, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7769 - 7772