Metal-Insulator Transition in Diluted Magnetic Semiconductor

被引：0
|
作者：
Kanazawa, I. [1 ]
机构：
[1] Tokyo Gakugei Univ, Dept Phys, Tokyo 1848501, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2003年 / 72卷
关键词：
diluted magnetic semiconductor; localization; metal-insulation transition; soliton; transport property;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页数：2
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