Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

被引：28
作者：
Zeng, ZM
Han, XF [1 ]
Zhan, WS
Wang, Y
Zhang, Z
Zhang, S
机构：
[1] Chinese Acad Sci, State Key Lab Magnetism, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Lab Microfabricat, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Lab Adv Mat & Electron Microscopy, Beijing 100080, Peoples R China
[4] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.72.054419
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3 barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.
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页数：5
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