An evaluation of electrografted copper seed layers for enhanced metallization of deep TSV structures

被引：8

作者：

Ledain, S. ^{[1
]}

Bunell, C. ^{[1
]}

Mangiagalli, P. ^{[2
,3
]}

Carles, A. ^{[2
,3
]}

Frederich, N. ^{[4
,5
]}

Delbos, E. ^{[4
,5
]}

Omnes, L. ^{[4
]}

Etcheberry, A. ^{[5
]}

机构：

[1] NXP Semiconductors, 2 Esplanade Anton Philips Campus Effisci, F-14460 Colombelles, France

[2] Esplanade Anton Philips, F-14460 Colombelles, France

[3] Alchimer SA, ZI Bonde, F-91300 Massy, France

[4] OM Grp Ultra Pure Chem, F-50620 Saint Fromond, France

[5] Univ Versailles, Inst Lavoisier, F-78035 Versailles, France

来源：

PROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2008年

关键词：

D O I：

10.1109/IITC.2008.4546955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present An evaluation of electrografted seed layers as an alternative metallization route to usual PVD liners for deep Through Silicon Vias (TSV). The capability of the electrografted layers to provide a better step coverage is demonstrated in high aspect ratio structures. The positive impact of the seed layer quality on the subsequent filling steps by conventional copper electrodeposition is also presented.

引用

页码：159 / +

页数：2