Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates

被引：33

作者：

Shahrjerdi, D. ^{[1
]}

Hekmatshoar, B. ^{[1
]}

Bedell, S. W. ^{[1
]}

Hopstaken, M. ^{[1
]}

Sadana, D. K. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 03期

关键词：

Low temperature; epitaxial growth; compressive strain; heavily doped; CHEMICAL-VAPOR-DEPOSITION; PHASE-DIAGRAMS; THIN-FILMS; SI; PHOSPHORUS;

D O I：

10.1007/s11664-011-1807-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150A degrees C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, triple-axis x-ray reciprocal-space mapping of the samples indicates that (i) the epitaxial layers are fully strained and (ii) the strain is graded. Secondary-ion mass spectrometry depth profiling reveals the correlation between the strain gradient and the hydrogen concentration profile within the epitaxial layers. Furthermore, heavily phosphorus-doped layers with an electrically active doping concentration of similar to 2 x 10(20) cm(-3) were obtained at such low growth temperatures.

引用

页码：494 / 497

页数：4

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