Functionalized Single-Walled Carbon-Nanotube-Blended P3HT-Based Thin-Film Transistors With Multiwalled Carbon-Nanotube Source and Drain Electrodes

被引：8

作者：

Chang, Chia-Hao ^{[1
,2
]}

Chien, Chao-Hsin ^{[1
,2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期

关键词：

Carbon nanotubes (CNTs); functionalized single-walled carbon nanotubes (F-SWCNTs); multiwalled carbon nanotube source and drain electrodes (MWCNT S/Ds); organic thin-film transistors (OTFTs); poly(3-hexylthiophene) (P3HT); MOBILITY;

D O I：

10.1109/LED.2011.2163054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the superior performance of thin-film transistors with a functionalized single-walled carbon-nanotube-blended poly(3-hexylthiophene) (F-SWCNT-P3HT) channel and multiwalled CNT source and drain electrodes (MWCNT S/Ds). Compared with transistors with a P3HT channel and gold electrodes, the mobility of transistors with an F-SWCNT-P3HT channel and MWCNT S/Ds is increased by more than one order of magnitude, i.e., from 0.0052 to 0.072 cm(2)/V . s. This improvement results not only from the well-known fast carrier transport assisted by the blend of F-SWCNTs but also, more importantly, from the reduced contact resistance between P3HT and MWCNT S/Ds.

引用

页码：1457 / 1459

页数：3

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