Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy

The selective growth of InSb on patterned SiO2 on Si substrates by molecular beam epitaxy has been studied. Crystal nuclei grow selectively on bare Si window areas above 500 degrees C, whereas they get deposited on the SiO2 areas at 400 degrees C. The X-ray diffraction results indicate that these nuclei consist of metal In and InSb. XRD peaks of InSb in several directions are observed. Two types of surface morphologies, i.e., those with smooth and those with rugged outlines, are observed on the crystal nuclei. The stoichiometric analysis suggests that the area enclosed by a smooth outline is composed of metal In. It is observed that this area decreases with an increase in the V/III flux ratio. A single nucleus can be fabricated on a bare Si window area using a square pattern with an area of 1.0 x 1.0 mu m(2). (C) 2010 Elsevier B.V. All rights reserved.