Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy

被引:4
作者
Hara, Shinsuke [1 ]
Iida, Tomoaki [1 ]
Nishino, Yuichi [1 ]
Uchida, Akinori [1 ]
Horii, Hiroyuki [1 ]
Fujishiro, Hiroki I. [1 ]
机构
[1] Tokyo Univ Sci, Dept Appl Elect, Chiba 2788510, Japan
关键词
Molecular beam epitaxy; Selective epitaxy; Antimonides; Semiconducting indium compounds; Semiconducting silicon; MICROCHANNEL EPITAXY; III-V; SUBSTRATE;
D O I
10.1016/j.jcrysgro.2010.11.134
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The selective growth of InSb on patterned SiO2 on Si substrates by molecular beam epitaxy has been studied. Crystal nuclei grow selectively on bare Si window areas above 500 degrees C, whereas they get deposited on the SiO2 areas at 400 degrees C. The X-ray diffraction results indicate that these nuclei consist of metal In and InSb. XRD peaks of InSb in several directions are observed. Two types of surface morphologies, i.e., those with smooth and those with rugged outlines, are observed on the crystal nuclei. The stoichiometric analysis suggests that the area enclosed by a smooth outline is composed of metal In. It is observed that this area decreases with an increase in the V/III flux ratio. A single nucleus can be fabricated on a bare Si window area using a square pattern with an area of 1.0 x 1.0 mu m(2). (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:397 / 400
页数:4
相关论文
共 50 条
[21]   Selective growth of InP on areas (1 μm x 1 μm) of silicon (100) substrate by molecular beam epitaxy [J].
Araki, K. ;
Hasegawa, S. ;
Asahi, H. .
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, :124-127
[22]   Molecular beam epitaxy of InN nanowires on Si [J].
Sarwar, A. T. M. Golam ;
Carnevale, Santino D. ;
Kent, Thomas F. ;
Laskar, Masihhur R. ;
May, Brelon J. ;
Myers, Roberto C. .
JOURNAL OF CRYSTAL GROWTH, 2015, 428 :59-70
[23]   Selective area growth of GaN nanorods by using molecular beam epitaxy: Effect of growth temperature and Ga flux [J].
Lee, Sang-Tae ;
Kumar, R. Saravana ;
Choi, Hyo-Seock ;
Park, Byung-Guon ;
Kim, Moon-Deock ;
Kim, Song-Gang ;
Yang, Woo-Chul .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 65 (10) :1634-1638
[24]   Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy [J].
Zakharov, ND ;
Werner, P ;
Gerth, G ;
Schubert, L ;
Sokolov, L ;
Gösele, U .
JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) :6-10
[25]   Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy [J].
So, Hyok ;
Pan, Dong ;
Li, Lixia ;
Zhao, Jianhua .
NANOTECHNOLOGY, 2017, 28 (13)
[26]   Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy [J].
Kawasaki, K ;
Nakamatsu, I ;
Hirayama, H ;
Tsutsui, K ;
Aoyagi, Y .
JOURNAL OF CRYSTAL GROWTH, 2002, 243 (01) :129-133
[27]   Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy [J].
Loke, WK ;
Yoon, SF ;
Zheng, HQ .
JOURNAL OF CRYSTAL GROWTH, 2001, 222 (1-2) :44-52
[28]   Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy [J].
Wei, Tieshi ;
Li, Xuefei ;
Li, Zhiyun ;
Yang, Wenxian ;
Wu, Yuanyuan ;
Xing, Zhiwei ;
Lu, Shulong .
JOURNAL OF SEMICONDUCTORS, 2022, 43 (12)
[29]   Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy [J].
M. Yu. Esin ;
Yu. Yu. Hervieu ;
V. A. Timofeev ;
A. I. Nikiforov .
Russian Physics Journal, 2018, 61 :1210-1214
[30]   Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy [J].
Koh, SJ ;
Kondo, T ;
Ishiwada, T ;
Iwamoto, C ;
Ichinose, H ;
Yaguchi, H ;
Usami, T ;
Shiraki, Y ;
Ito, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (12B) :L1493-L1496