The effects of chromatic aberration on the performance of GaInP/GaAs/Ge concentrator solar cells from Fresnel optics

被引:21
作者
Cotal, H [1 ]
Sherif, R [1 ]
机构
[1] Spectrolab Inc, Sylmar, CA 91342 USA
来源
CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年
关键词
D O I
10.1109/PVSC.2005.1488240
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
dResults are reported for the effects of chromatic aberration on the electrical performance of triple junction (3J), GaInP/GaAs/Ge concentrator solar cells for indoor measurements. A Fresnel lens was. moved away from the solar cell such that the concentration level increased, and then decreased while the lens-to-cell distance continued to increase. From such movement, the FF exhibited a series of minima and maxima in the region where light is apparently focused as determined by the naked eye. These effects are due to chromatic aberrations that affect the FF, and to some extent, the subcell short circuit currents in the 3J stack. Aberrations can drive the 3J device in a top cell-or middle cell-limited mode, and make the top cell FF become more predominant than the middle cell FF, or vice versa with the 3J FF influenced more by either subcell FF. It is shown that the multijunction cell power output is also affected, and the gain in power depends on the size of the solar cell relative to the size of the beam waist, and the focal length of blue light relative to that of red light.
引用
收藏
页码:747 / 750
页数:4
相关论文
共 8 条
[1]   High concentration testing and performance of multijunction solar cells [J].
Cotal, H ;
Sherif, R ;
Glenn, G ;
Krut, D ;
Paredes, A ;
Meza, T ;
Hayden, H .
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :1612-1615
[2]  
COTAL H, 2003, IN PRESS 3 WORLD C P
[3]  
JAMES LW, 1994, P 1 WORLD C PHOT EN
[4]   Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells [J].
Karam, NH ;
King, RR ;
Cavicchi, BT ;
Krut, DD ;
Ermer, JH ;
Haddad, M ;
Cai, L ;
Joslin, DE ;
Takahashi, M ;
Eldredge, JW ;
Nishikawa, WT ;
Lillington, DR ;
Keyes, BM ;
Ahrenkiel, RK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) :2116-2125
[5]  
KING RR, 2004, P 19 EUR PHOT SOL EN
[6]  
ONEILL MJ, 2000, Patent No. 6031179
[7]  
SHERIF R, 2003, IN PRESS 3 WORLD C P
[8]  
SHERIF R, 2004, P 19 EUR PHOT SOL EN