Scalability and homogeneity of slot die-coated metal oxide semiconductor for TFTs

被引:13
作者
Takata, Ryo [1 ]
Neumann, Anita [1 ]
Weber, Dennis [1 ]
Pham, Duy-Vu [1 ]
Anselmann, Ralf [1 ]
Kitamura, Yoshitaka [2 ]
Kakimura, Takashi [2 ]
Suzuki, Satoshi [2 ]
Minami, Shigeki [2 ]
Kodama, Mitsumasa [3 ]
机构
[1] Evon Resource Efficiency GmbH, D-45772 Marl, Germany
[2] SCREEN Finetech Solut Co Ltd, Kyoto 6028585, Japan
[3] SCREEN Holdings Co Ltd, Kyoto 6028585, Japan
关键词
TFTs; metal oxide; solution processable; scalability; slot die coating; indium oxide-based precursor solution;
D O I
10.1002/jsid.450
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An indium oxide-based precursor solution has been developed by spin coating method. In order to apply this material to mass production, material, process, and equipment optimizations for slot die coating have been implemented. Slot die coating is a cost-effective and scalable process and already applied to photoresist materials in the display industry. The indium oxide-based precursor solution has been coated on bare glasses and thin-film transistor substrates by a mass production-type slot die coater. Mobility of over 10 cm(2)/Vs is achieved for the first time for a large area at an annealing temperature of 350 degrees C. The homogeneity of the film will be presented.
引用
收藏
页码:381 / 385
页数:5
相关论文
共 14 条
[1]  
Arai T., 2015, SID S, V46, P1016, DOI DOI 10.1002/SDTP.10342
[2]  
Botnaras S, 2012, IDW, V19, P437
[3]  
Hsieh H.-H., 2010, SID Int. Symp. Dig. Tech. Papers, V41, P140
[4]  
Huang F., RSC POLYM CHEM SERIE, P379, DOI [10.1039/9781782622307, DOI 10.1039/9781782622307]
[5]   High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors [J].
Jaehnike, Felix ;
Duy Vu Pham ;
Anselmann, Ralf ;
Bock, Claudia ;
Kunze, Ulrich .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (25) :14011-14017
[6]  
Jeong JK, 2008, SID INT SYMP DIG TEC, V39, P1
[7]  
Matsuo T., 2014, SID S DIG TECH PAP, V45, P83
[8]   Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].
Nomura, K ;
Ohta, H ;
Takagi, A ;
Kamiya, T ;
Hirano, M ;
Hosono, H .
NATURE, 2004, 432 (7016) :488-492
[9]  
Seo H.-S., 2010, SID S MAY, V41, P1132, DOI DOI 10.1889/1.3499856
[10]  
Su K.-H., 2013, IDW 13, P318