Identification of Mn-related Raman modes in Mn-doped ZnO thin films

被引：30

作者：

Hu, Y. M. ^{[1
]}

Wang, C. Y. ^{[1
]}

Lee, S. S. ^{[1
]}

Han, T. C. ^{[1
]}

Chou, W. Y. ^{[2
]}

Chen, G. J. ^{[3
]}

机构：

[1] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 811, Taiwan

[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

[3] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2011年 / 42卷 / 03期

关键词：

zinc oxide; manganese; Raman spectroscopy; Mn(2)O(3); sputtering; ZINC-OXIDE; FERROMAGNETISM; NANOPARTICLES; TEMPERATURE; SCATTERING; SPECTRA;

D O I：

10.1002/jrs.2695

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

This article aims to investigate the Raman modes present in Mn-doped ZnO thin films that are deposited using the magnetron co-sputtering method. A broad band ranging from 500 to 590 cm(-1) is present in the Raman spectra of heavily Mn-doped ZnO films. The multi-peak-fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm(-1) could be a characteristic mode of Mn(2)O(3). The results of this study suggest that the origin of the Raman peaks in Mn-doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：434 / 437

页数：4

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