Recombination studies in a He-Ar-H2 plasma

The recombination of HI ions with electrons has been studied in afterglow plasma in three different experiments. In two experiments, using the Variable Temperature Stationary Afterglow (VTAISA) and the Variable Temperature Flowing Afterglow (VT-FALP) techniques, a decay of the electron number density was measured by an electrostatic Langmuir probe to determine the recombination rate coefficient. In the third experiment a near infrared Cavity Ring-Down Absorption Spectrometer (CRDS) was used to monitor the decay of the H-3(+) (v = 0) ion density during the afterglow. Measurements were carried out in helium buffer gas with small admixtures of argon and hydrogen at total pressures ranging from 150 up to 1200 Pa and at buffer gas temperatures ranging from 100 up to 330 K. In the experiments the partial number density of hydrogen was varied from 5 x 10(10) up to 1 X 10(16) cm(-3) and for this broad range of hydrogen number densities effective recombination rate coefficients were obtained, which varied over three orders of magnitude from 2 x 10(-9) cm(3)s(-1) at [H-2] = 5 x 10(10) cm(-3) up to 3 x 10(-6) cm(3)s(-1) at [H-2] = 1 X 10(16) cm(-3). Using our experimental results we discuss possible mechanisms of recombination in hydrogen plasma in a very broad range of several parameters: buffer gas pressure, temperature, electron number density, hydrogen number density and internal excitation of recombining ions.