Droop in III-nitrides: Comparison of bulk and injection contributions

被引：52

作者：

David, Aurelien ^{[1
]}

Gardner, Nathan F. ^{[1
]}

机构：

[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

关键词：

D O I：

10.1063/1.3515851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study mechanisms which are thought to contribute to efficiency droop in III-nitrides. We first observe droop in a photoluminescence (PL) experiment on bulk GaN, which confirms the existence of a bulk contribution to droop, unrelated to piezoelectric fields or alloy fluctuations. We then perform biased-PL on a series of InGaN light-emitting diodes to estimate the potential impact of carrier leakage on PL experiments. We conclude that carrier leakage is only significant at very low pump densities and does not contribute to droop, thus validating the use of PL to characterize droop. (C) 2010 American Institute of Physics. [doi:10.1063/1.3515851]

引用

页数：3

共 5 条

[1] Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
David, Aurelien
Grundmann, Michael J.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (10)
[2] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
Gardner, N. F.
Mueller, G. O.
Shen, Y. C.
Chen, G.
Watanabe, S.
Gotz, W.
Krames, M. R.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (24)
[3] Defect related issues in the "current roll-off" in InGaN based light emitting diodes
Monemar, B.
Sernelius, B. E.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)
[4] On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
Schubert, Martin F.
Xu, Jiuru
Dai, Qi
Mont, Frank W.
Kim, Jong Kyu
Schubert, E. Fred
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (08)
[5] Auger recombination in InGaN measured by photoluminescence
Shen, Y. C.
Mueller, G. O.
Watanabe, S.
Gardner, N. F.
Munkholm, A.
Krames, M. R.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (14)

← 1 →