Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals

被引：4

作者：

Hao, Huilian ^{[1
]}

Zhao, Yue ^{[1
]}

Song, Tianliang ^{[1
]}

Wang, Xu ^{[1
]}

Li, Changwang ^{[1
]}

Li, Wenyao ^{[1
]}

Shen, Wenzhong ^{[2
,3
]}

机构：

[1] Shanghai Univ Engn Sci, Coll Mat Engn, 333 Long Teng Rd, Shanghai 201620, Peoples R China

[2] Shanghai Jiao Tong Univ, Inst Solar Energy, Dept Phys & Astron, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China

[3] Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Dept Phys & Astron, Minist Educ, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China

来源：

NANOTECHNOLOGY | 2021年 / 32卷 / 50期

基金：

英国工程与自然科学研究理事会;

关键词：

colloidal silicon nanocrystals; light-emitting diode; electroluminescence; charge transport; SI NANOCRYSTALS; DOTS; PHOTOLUMINESCENCE; CONFINEMENT; PERFORMANCE;

D O I：

10.1088/1361-6528/ac2ac1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Herein, we report an enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode. c-Si NCs were synthesized by facile femtosecond laser ablation. Based on the structural characterization and opto-electrics properties analysis, both photoluminescence and electroluminescence arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency have been obtained to be 0.79 mW cm(-2) and similar to 6.6%, respectively. These results indicate that Si NCs are very attractive as a potential optical source for future integrated chips.

引用

页数：6

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