Temperature-dependent dielectric and energy-storage properties of Pb(Zr, Sn, Ti)O3 antiferroelectric bulk ceramics

被引：22

作者：

Chen, Xuefeng ^{[1
]}

Liu, Zhen ^{[1
]}

Xu, Chenhong ^{[1
]}

Cao, Fei ^{[1
]}

Wang, Genshui ^{[1
]}

Dong, Xianlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China

来源：

AIP ADVANCES | 2016年 / 6卷 / 05期

关键词：

LEAD-ZIRCONATE-TITANATE; PHASE-TRANSFORMATIONS; INCOMMENSURATION;

D O I：

10.1063/1.4948915

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dielectric and energy-storage properties of Pb0.99Nb0.02[(Zr0.60Sn0.40)(0.95) Ti-0.05](0.98)O-3 (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T-0, T-C, T-2 are obtained from the dielectric temperature spectrum. At different temperature regions (below T-0, between T-0 and T-C, and above T-C), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at similar to T-0. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics. (C) 2016 Author(s).

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页数：6

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