Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments

被引:308
作者
Naghavi, N. [1 ]
Abou-Ras, D. [2 ]
Allsop, N. [2 ]
Barreau, N. [3 ]
Buecheler, S. [4 ]
Ennaoui, A. [2 ]
Fischer, C. -H. [2 ]
Guillen, C. [5 ]
Hariskos, D. [6 ,7 ]
Herrero, J. [5 ]
Klenk, R. [2 ]
Kushiya, K. [8 ]
Lincot, D. [1 ]
Menner, R. [6 ,7 ]
Nakada, T. [9 ]
Platzer-Bjorkman, C. [10 ]
Spiering, S. [6 ,7 ]
Tiwari, A. N. [4 ]
Torndahl, T. [10 ]
机构
[1] ENSCP, CNRS, EDF IRDEP, UMR 7174,Inst Rech & Dev Energie Photovolta, F-78401 Chatou, France
[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Solar Energy Div, D-14109 Berlin, Germany
[3] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France
[4] Empa Swiss Fed Labs Mat Testing & Res, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland
[5] CIEMAT, Dept Energia, E-28040 Madrid, Spain
[6] Wasserstoff Forsch Baden Wurttemberg, D-70565 Stuttgart, Germany
[7] Zentrum Sonnenenergie, D-70565 Stuttgart, Germany
[8] CIS R&D Grp, Showa Shell Sekiyu KK New Business Dev NBD Div, Kanagawa, Japan
[9] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Kanagawa, Japan
[10] Uppsala Univ, Angstrom Solar Ctr, SE-75121 Uppsala, Sweden
来源
PROGRESS IN PHOTOVOLTAICS | 2010年 / 18卷 / 06期
关键词
Cd-free buffer layers; window layers; transparent conducting oxides; chalcopyrite-based solar cells; Cu(In; Ga)(S; Se)(2); CU(IN; GA)SE-2; SOLAR-CELLS; INDIUM SULFIDE; CHEMICAL-BATH; ZINC-OXIDE; GROWTH-MECHANISM; BAND-OFFSET; IN2S3; INTERFACE; DEPOSITION; EFFICIENCY;
D O I
10.1002/pip.955
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码:411 / 433
页数:23
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