Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition

被引：196
作者：
Oyamada, T
Tanaka, H
Matsushige, K
Sasabe, H
Adachi, C
机构：
[1] CIST, Dept Photon Mat Sci, Chitose, Hokkaido 0668655, Japan
[2] Rohm Co, Ukyo Kyoto 6158585, Japan
[3] Kyoto Univ, IIC, Sakyo Ku, Kyoto 6068501, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期
关键词：
D O I：
10.1063/1.1600848
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the operation of an organic switching device using a uniform poly-crystalline Cu:7, 7, 8, 8-Tetracyanoquinodimethane (TCNQ) charge transfer (CT)-complex thin film that is prepared by vacuum vapor codeposition. Characteristic CT-absorption at lambda=600-1200 nm was observed in the complex film in the UV-visible spectrum and the cyano stretching peak in the IR spectrum shifted to a higher (more than 29 cm(-1)) wave number than that of a pristine TCNQ film, suggesting the formation of a CT-complex in the evaporated thin film. Reproducible electrical switching characteristics were observed in the indium tin oxide/Al/(Al2O3)/Cu:TCNQ/Al structure. The device exhibited a clear threshold from low impedance to high impedance at an applied voltage of 10.0+/-2.0 V and a reverse phenomenon at a negative bias of -9.5+/-2.0 V. In this study, we demonstrate that a thin Al2O3 layer between the aluminum (Al) anode and Cu:TCNQ layers creates reproducible switching. (C) 2003 American Institute of Physics.
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页码：1252 / 1254
页数：3
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