Enhanced conductivity in pulsed laser deposited Ce0.9Gd0.1O2-δ/SrTiO3 heterostructures

被引：14

作者：

Kant, K. Mohan ^{[1
]}

Esposito, V. ^{[1
]}

Pryds, N. ^{[1
]}

机构：

[1] Riso Denmark Tech Univ, Fuel Cells & Solid State Chem Div, DK-4000 Roskilde, Denmark

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 14期

关键词：

ELECTRICAL-CONDUCTIVITY; IONIC-CONDUCTIVITY; THIN-FILMS; NANOCRYSTALLINE CERIA; ELECTROLYTES; FABRICATION; MGO;

D O I：

10.1063/1.3497294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Significant enhancement in the electrical conductivity of Ce0.9Gd0.1O2-delta (CGO) thin films (250 and 500 nm) deposited on MgO(001) substrate is observed by introducing similar to 50 nm thin SrTiO3 buffer layer film. Introduction of the buffer layer is found to form epitaxial films, leading to minimal grain boundary network that results in a free conduction path with near-zero blocking effects perpendicular to current flow. The in-plane conductivity measurements confirm increase in conductivity with increase in compressive strain on CGO films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3497294]

引用

页数：3

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