Laser induced forward transfer of metal oxides using femtosecond double pulses

被引：16
作者：
Papadopoulou, E. L. [1 ]
Axente, E. [1 ,2 ]
Magoulakis, E. [1 ,3 ]
Fotakis, C. [1 ,3 ]
Loukakos, P. A. [1 ]
机构：
[1] Inst Elect Struct & Laser, Fdn Res & Technol Hellas, Iraklion 71110, Greece
[2] Natl Inst Lasers Plasma & Radiat Phys, Lasers Dept, RO-77125 Bucharest, Romania
[3] Univ Crete, Dept Phys, Iraklion 71409, Greece
来源：
APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 02期
关键词：
Laser induced forward transfer; Pulse shaping; Ultrafast laser materials processing; Microstructure fabrication; Transparent conductive oxides; Microprocessing; ULTRAFAST CARRIER DYNAMICS; ZNO; ABSORPTION; BEAM;
D O I：
10.1016/j.apsusc.2010.07.022
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Laser induced forward transfer (LIFT) of ZnO and TiO2 thin films onto Si has been realized with femtosecond double pulses of equal intensity, as a basic form of pulse shaping. In an effort to investigate the possibility to control the spatial distribution of the transfer via pulse separation, we used separation times varying from 0 to 10 ps. We have found that the size of the transferred spots increases by as much as 50% for pulse separation up to 500 fs, while for longer pulse separations the transferred spots acquire a constant area. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：508 / 511
页数：4
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