Laser induced forward transfer of metal oxides using femtosecond double pulses

被引：16

作者：

Papadopoulou, E. L. ^{[1
]}

Axente, E. ^{[1
,2
]}

Magoulakis, E. ^{[1
,3
]}

Fotakis, C. ^{[1
,3
]}

Loukakos, P. A. ^{[1
]}

机构：

[1] Inst Elect Struct & Laser, Fdn Res & Technol Hellas, Iraklion 71110, Greece

[2] Natl Inst Lasers Plasma & Radiat Phys, Lasers Dept, RO-77125 Bucharest, Romania

[3] Univ Crete, Dept Phys, Iraklion 71409, Greece

来源：

APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 02期

关键词：

Laser induced forward transfer; Pulse shaping; Ultrafast laser materials processing; Microstructure fabrication; Transparent conductive oxides; Microprocessing; ULTRAFAST CARRIER DYNAMICS; ZNO; ABSORPTION; BEAM;

D O I：

10.1016/j.apsusc.2010.07.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Laser induced forward transfer (LIFT) of ZnO and TiO2 thin films onto Si has been realized with femtosecond double pulses of equal intensity, as a basic form of pulse shaping. In an effort to investigate the possibility to control the spatial distribution of the transfer via pulse separation, we used separation times varying from 0 to 10 ps. We have found that the size of the transferred spots increases by as much as 50% for pulse separation up to 500 fs, while for longer pulse separations the transferred spots acquire a constant area. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：508 / 511

页数：4

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