Accurate ab initio predictions of III-V direct-indirect band gap crossovers

被引:38
|
作者
Nicklas, Jeremy W. [1 ]
Wilkins, John W. [1 ]
机构
[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
关键词
SEMICONDUCTORS; APPROXIMATION;
D O I
10.1063/1.3485297
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the compositional dependence of the electronic band structure for a range of III-V alloys. Standard density functional theory is insufficient to mimic the electronic gap energies at different symmetry points of the Brillouin zone. The Heyd-Scuseria-Ernzerhof hybrid functional with screened exchange accurately reproduces the experimental band gaps and, more importantly, the alloy concentration of the direct-indirect gap crossovers for the III-V alloys studied here: AlGaAs, InAlAs, AlInP, InGaP, and GaAsP. (C) 2010 American Institute of Physics. [doi:10.1063/1.3485297]
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页数:3
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