Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe

被引：10

作者：

Troccoli, M

Scamarcio, G

Fraboni, B

Priolo, F

Gasparotto, A

机构：

[1] Univ Bari, Ist Nazl Fis Mat, I-70126 Bari, Italy

[2] Univ Bari, Dipartimento Fis, I-70126 Bari, Italy

[3] Univ Bologna, Dipartimento Fis, I-40137 Bologna, Italy

[4] Univ Bologna, Ist Nazl Fis Mat, I-40137 Bologna, Italy

[5] Univ Catania, Dipartmento Fis, I-95129 Catania, Italy

[6] Univ Catania, Ist Nazl Fis Mat, I-95129 Catania, Italy

[7] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[8] Univ Padua, Ist Nazl Fis Mat, I-35131 Padua, Italy

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 01期

关键词：

D O I：

10.1088/0268-1242/16/1/101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mid-infrared electroluminescence associated with internal transitions of Fe2+ deep levels in semi-insulating InP:Fe layers, obtained by ion implantation at high doses in the range 10(13)-10(15) cm(-2), is reported. The characteristic line spectrum corresponding to the symmetry-allowed d-shell transitions of Fe2+ can be observed up to 30 K, while a broader band emission is detectable up to 200 K. The estimated conversion efficiency of electrical into mid-IR optical power is similar to4 x 10(-5), a factor of similar to 40 larger than previously reported values in MOCVD-grown planar electroluminescent devices.

引用

页码：L1 / L3

页数：3

共 10 条

[1] High-resistance buried layers by MeV Fe implantation in n-type InP [J].