Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors

被引：136

作者：

Jo, Jeong-Wan ^{[1
]}

Kim, Jaekyun ^{[1
]}

Kim, Kyung-Tae ^{[1
]}

Kang, Jin-Gu ^{[1
]}

Kim, Myung-Gil ^{[2
]}

Kim, Kwang-Ho ^{[3
]}

Ko, Hyungduk ^{[4
]}

Kim, Yong-Hoon ^{[5
,6
]}

Park, Sung Kyu ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

[2] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea

[3] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[4] KIST, Ctr Optoelect Convergence Syst, Seoul, South Korea

[5] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon, South Korea

[6] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon, South Korea

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; LOW-TEMPERATURE FABRICATION; GATE DIELECTRICS; ROOM-TEMPERATURE; PERFORMANCE; SUBSTRATE; CIRCUITS; ROUTE; TFTS;

D O I：

10.1002/adma.201404296

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.

引用

页码：1182 / 1188

页数：7

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